• DocumentCode
    3032283
  • Title

    Three-terminal tandem solar cells with a back-contact type bottom cell

  • Author

    Nagashima, Tomonori ; Okumura, Kenichi ; Murata, Kiyohito ; Kimura, Yoshio

  • Author_Institution
    Higashifuji Tech. Center, Toyota Motor Corp., Shizuoka, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1193
  • Lastpage
    1196
  • Abstract
    In this paper, the authors analyze three-terminal tandem solar cells with a back-contact type bottom cell, in which III-V compound materials are stacked on a substrate of IV materials. This structure reduces loss resulting from current mismatch of the Ge bottom cell and resistance loss caused by tunnel junction at the GaAs/Ge interface. It is expected that the structure will achieve a high efficiency. They carried out calculations to find the relationship between carrier transportation characteristics and energy bands and to obtain I-V curves of the tandem solar cells. They found that the structure fulfills solar cell functions
  • Keywords
    III-V semiconductors; elemental semiconductors; energy gap; gallium arsenide; germanium; p-n heterojunctions; semiconductor device models; solar cells; GaAs-Ge solar cells; GaAs/Ge interface; Ge bottom cell; I-V curves; III-V compound materials; IV materials substrate; back-contact type bottom cell; carrier transportation characteristics; energy bands; resistance loss; solar cell functions; three-terminal tandem solar cells; tunnel junction; Analytical models; Electron emission; Gallium arsenide; Narrowband; Photoconductivity; Photovoltaic cells; Power generation; Road transportation; Solar power generation; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
  • Conference_Location
    Anchorage, AK
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-5772-8
  • Type

    conf

  • DOI
    10.1109/PVSC.2000.916102
  • Filename
    916102