Title :
Monte Carlo simulation of AlGaN/GaN heterostructures
Author :
Mateos, J. ; Pérez, S. ; Iniguez-de-la-Torre, I. ; Pardo, D. ; Gonzalez, T.
Author_Institution :
Univ. de Salamanca, Salamanca
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
We have developed an ensemble Monte Carlo simulator self-consistently coupled with a 2D Poisson solver for the analysis of AlGaN/GaN and related heterostructures. Special attention has been paid to the implementation of dislocation scattering, allowing to correctly reproduce the measured electron mobility in the GaN channel of the heterostructures. The influence of surface polarization charges at the AlGaN/GaN interface (which leads to an enhanced electron accumulation in the channel) and surface charges at the semiconductor-air interface on the conduction band profile and electron density in the channel has been studied.
Keywords :
III-V semiconductors; Monte Carlo methods; Poisson equation; aluminium compounds; dislocation scattering; electron density; electron mobility; gallium compounds; semiconductor heterojunctions; surface charging; wide band gap semiconductors; 2D Poisson solver; AlGaN-GaN; AlGaN/GaN heterostructures; AlGaN/GaN interface; GaN channel; Monte Carlo simulation; conduction band profile; dislocation scattering; electron accumulation; electron density; electron mobility; semiconductor-air interface; surface polarization charges; Aluminum gallium nitride; Electromagnetic scattering; Electrons; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Monte Carlo methods; Optical polarization; Optical scattering; GaN; HEMTs; Monte Carlo simulations; heterojunctions;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383999
