DocumentCode
3032504
Title
Minimally invasive neutron beam monitoring for single-event effects accelerated testing
Author
Zhang, Lyn H. ; Platt, S.P.
Author_Institution
Sch. of Comput., Eng. & Phys. Sci., Univ. of Central Lancashire, Preston, UK
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
945
Lastpage
949
Abstract
The use of silicon photodiodes for local beam monitoring during neutron SEE tests is demonstrated. Results from irradiations at the LANSCE ICE House are presented and analyzed. Local fluence measurements can be made without significant pile-up, even in pulsed beams. Beam degradation by scatterers such as upstream experiments can be quantified.
Keywords
elemental semiconductors; neutron effects; photodiodes; semiconductor device testing; silicon; LANSCE ICE House; Si; beam degradation; local beam monitoring; local fluence measurements; minimally invasive neutron beam monitoring; neutron SEE tests; silicon photodiodes; single-event effects accelerated testing; upstream experiments; Detectors; Ice; Monitoring; Neutrons; Particle beams; Radiation effects; Semiconductor device measurement; Neutron radiation effects; Particle beam measurements; Semiconductor device testing; Silicon radiation detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131336
Filename
6131336
Link To Document