Fluorine diffusion in step-doped InAlAs layers on InP substrate

Author

Wakejima, A. ; Onda, K. ; Fujihara, A. ; Mizuki, E. ; Kanamori, M.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

533

Lastpage

536

Abstract

The quantitative relation between fluorine (F) accumulation and Si donor concentration in n-InAlAs layers on InP substrate was investigated for several kinds of step-doped InAlAs samples using secondary ion mass spectroscopy. From the depth profile of F and Si donor in a periodic i-/n-InAlAs sample, we found that F accumulates only in n-InAlAs layers, passing through i-InAlAs layers. Also, we found that the amount of F accumulation in an n-InAlAs layer depends on the Si doping concentration. The experimental results can be explained by considering two states of F. In one state, F is bound to a Si donor and immobile, and in the other it is free and can diffuse

Keywords

III-V semiconductors; aluminium compounds; diffusion; fluorine; indium compounds; secondary ion mass spectra; semiconductor doping; InAlAs:Si,F; InP; InP substrate; depth profile; fluorine diffusion; secondary ion mass spectroscopy; silicon donor concentration; step-doped i-/n-InAlAs layer; Doping; Electron mobility; Indium compounds; Indium phosphide; Laboratories; Mass spectroscopy; National electric code; Pollution measurement; Substrates; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600220

Filename

600220