DocumentCode :
3032642
Title :
InAlAs/InGaAs heteroestructures for THz generation
Author :
Pérez, S. ; Mateos, J. ; Pardo, D. ; González, T.
Author_Institution :
Univ. de Salamanca, Salamanca
fYear :
2007
fDate :
Jan. 31 2007-Feb. 2 2007
Firstpage :
127
Lastpage :
130
Abstract :
We present a microscopic analysis of current fluctuations in InAIAs/InGaAs slot diodes (base of HEMT devices). An ensemble Monte Carlo simulation is used for the calculations. We analyze the origin of the strong THz oscillations appearing when the bias surpasses 0.5 V. This effect is apparently caused by the presence of Gunn-like oscillations whose dynamics is controlled by ballistic Gamma-valley electrons in the channel. These carriers are capable to reach extremely high velocities due to (i) the influence of degeneracy effects, which significantly reduces the rate of scattering mechanisms, and (ii) the presence of the recess, which strongly accelerate the electrons, launching them into the drain region. The influence of the effective distance travelled by the domain and the recess length are analyzed in order to improve the control of the frequency and magnitude of the oscillations.
Keywords :
Gunn effect; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave devices; submillimetre wave generation; Gunn like oscillations; InAlAs-InGaAs; Monte Carlo simulation; THz generation; slot diodes; Acceleration; Cause effect analysis; Diodes; Electrons; Fluctuations; HEMTs; Indium compounds; Indium gallium arsenide; Microscopy; Scattering; Gunn effect; Monte Carlo simulations; Noise; Sub-millimetre wave devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
Type :
conf
DOI :
10.1109/SCED.2007.384010
Filename :
4271185
Link To Document :
بازگشت