Experimental analysis of SEL sensitiveness on Atmel MG2RT technology

Author

Sterpone, L. ; Mancini, R. ; Gelfusa, D.

Author_Institution

Dipt. di Autom. e Inf., Politec. di Torino, Torino, Italy

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

825

Lastpage

828

Abstract

Single Event Latchup (SEL) in Gate Arrays MG2 Radiation Hardened Atmel technology is examined with respect to strike of heavy ions. Radiation tests, performed at GANIL radiation facility, have been executed at high temperature by monitoring current absorption and analyzing the functionalities of the MSDRX ASIC implemented using MG2RT technology part of a TAS-I transponder core. A drastic improvement of the device SEL sensitivity is observed for high power supply voltages. In this paper, we describe the performed experiments, the experimental setup and we provide an accurate investigation of the obtained results.

Keywords

application specific integrated circuits; radiation hardening (electronics); Atmel MG2RT technology; GANIL radiation facility; MSDRX ASIC; SEL sensitiveness; TAS-I transponder core; current absorption monitoring; gate array MG2 radiation hardened Atmel technology; heavy-ions; radiation tests; single-event latchup; Clocks; Monitoring; Noise; Performance evaluation; Power supplies; Temperature measurement; Temperature sensors; Radiation effects; Single Event Latchup; heavy ion; high temperature test;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131341

Filename

6131341