Title :
Zn+, Zn+/P+ and Zn+/As + implanted InP: study of electrical and symmetry properties
Author :
Tiginyanu, I.M. ; Kravetsky, I.V. ; Ursaki, V.V. ; Marowsky, G. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Abstract :
InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P+ ions in order to improve the activation efficiency of Be and Mg in InP. The goal of this work was to study the activation efficiency of Zn impurity coimplanted with P+ and As+ ions in n-InP as well as the peculiarities of crystal lattice recovering during annealing. The latter was investigated by optical second harmonic generation (SHG) method which proved to be a versatile and sensitive probe of symmetry properties of InP near-surface layers
Keywords :
III-V semiconductors; annealing; arsenic; crystal symmetry; indium compounds; ion implantation; optical harmonic generation; zinc; InP:Zn; InP:Zn,As; activation efficiency; annealing; coimplantation; crystal lattice recovery; electrical properties; impurity; ion implantation; optical second harmonic generation; p-type doping; symmetry; Annealing; Impurities; Indium phosphide; Lattices; Nonlinear optics; Optical harmonic generation; Optical sensors; Particle beam optics; Probes; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600221
