SiGe Bipolar Transistors for Harsh Radiation Environments

Author

Diez, S. ; Ullan, M. ; Campabadal, F. ; Lozano, Manuel ; Pellegrini, Giulio ; Knoll, D.

Author_Institution

Centro Nacional de Microelectron., Barcelona

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

158

Lastpage

161

Abstract

We have performed radiation hardness studies over three different SiGe HBT technologies from IHP (Innovation for High Performance Microelectronics). We have studied gamma and neutron irradiations to study separately ionization and displacement effects. The specific application for which these technologies are being evaluated is the front-end readout electronics of the detector modules of the future ATLAS upgrade for the Super-LHC, but space-oriented applications are also considered. It can be seen from the results strong gain degradations for the highest doses and fluencies, and an indication of damage saturation in some cases. Only small differences can be observed among the three different technologies with respect to their radiation hardness.

Keywords

bipolar transistors; radiation hardening (electronics); silicon compounds; HBT technology; bipolar transistors; detector modules; front-end readout electronics; gamma irradiation; neutron irradiation; radiation hardness; Bipolar transistors; Germanium silicon alloys; Heterojunction bipolar transistors; Ionization; Microelectronics; Neutrons; Readout electronics; Silicon germanium; Space technology; Technological innovation; Displacement damage; SiGe HBT; gamma radiation; hardness assurance; ionization damage; neutron radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.384016

Filename

4271193