Title :
Electron beam induced current and cathodoluminescence study of proton irradiated quantum-well solar cells
Author :
Walters, Robert J. ; Summers, G.P. ; Messenger, S.R. ; Romero, M.J. ; Araújo, D. ; García, R. ; Freundlich, A. ; Newman, F. ; Vilela, M.F.
Abstract :
The effects of proton irradiation on InP-based multi-quantum well solar cells (QWSCs) are investigated by the electron beam induced current (EBIC) and cathodoluminescence (CL) techniques. From analysis of the EBIC data, capture rates within the quantum wells are estimated from which the open circuit voltage is calculated and shown to agree well with the measured values. The diffusion length for radiative recombination within the quantum wells is also estimated. From Arrhenius plots of the luminescence excited in quantum wells, the proton irradiation-induced recombination centers are characterized. The results suggest that narrower wells make QWSCs more sensitive to radiation damage
Keywords :
III-V semiconductors; carrier lifetime; cathodoluminescence; electron-hole recombination; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; Arrhenius plots; EBIC; InP; InP-based multi-quantum well solar cells; capture rates; cathodoluminescence; diffusion length; electron beam induced current; open circuit voltage; proton irradiated quantum-well solar cells; proton irradiation; proton irradiation-induced recombination centers; radiative recombination; Degradation; Electron beams; Epitaxial growth; Indium phosphide; Laboratories; Photovoltaic cells; Protons; Quantum well devices; Quantum wells; Radiative recombination;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916132
