DocumentCode :
3033147
Title :
Evaluation on protective single event burnout test method for power DMOSFETs
Author :
Liu, Sandra ; Marec, Ronan ; Sherman, Phillip ; Titus, Jeffrey L. ; Bezerra, Françoise ; Ferlet-Cavrois, Veronique ; Marin, Marc ; Sukhaseum, Nicolas ; Widmer, Fabien ; Muschitiello, Michele ; Gouyet, Lionel ; Ecoffet, Robert ; Zafrani, Max
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
656
Lastpage :
660
Abstract :
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed.
Keywords :
power MOSFET; resistors; SEB cross-section; destructive test method; power DMOSFET; protective single event burnout test method; resistor value selection; Electronic mail; MOSFET circuits; Resistors; Silver; Threshold voltage; Transient analysis; Xenon; Nondestructive; Power MOSFET; Single Event Burnout; Test Method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131364
Filename :
6131364
Link To Document :
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