DocumentCode
3033147
Title
Evaluation on protective single event burnout test method for power DMOSFETs
Author
Liu, Sandra ; Marec, Ronan ; Sherman, Phillip ; Titus, Jeffrey L. ; Bezerra, Françoise ; Ferlet-Cavrois, Veronique ; Marin, Marc ; Sukhaseum, Nicolas ; Widmer, Fabien ; Muschitiello, Michele ; Gouyet, Lionel ; Ecoffet, Robert ; Zafrani, Max
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
656
Lastpage
660
Abstract
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed.
Keywords
power MOSFET; resistors; SEB cross-section; destructive test method; power DMOSFET; protective single event burnout test method; resistor value selection; Electronic mail; MOSFET circuits; Resistors; Silver; Threshold voltage; Transient analysis; Xenon; Nondestructive; Power MOSFET; Single Event Burnout; Test Method;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131364
Filename
6131364
Link To Document