Title :
Investigations of single event effects with heavy ions of energies up to 1.5 GeV/n
Author :
Hoeffgen, Stefan K. ; Durante, Marco ; Ferlet-Cavrois, Veronique ; Harboe-Sørensen, Reno ; Lennartz, Wilhelm ; Kuendgen, Tobias ; Kuhnhenn, Jochen ; LaTessa, Chiara ; Mathes, Markus ; Menicucci, Alessandra ; Metzger, Stefan ; Nieminen, Petteri ; Pleskac,
Author_Institution :
Fraunhofer INT, Euskirchen, Germany
Abstract :
The ESA SEU-Monitor, a DDR2 SDRAM and a power MOSFET have been irradiated at GSI with ions of energies from 80 to 1500 MeV/n. The results are compared to low energy (<; 50 MeV/n) data.
Keywords :
DRAM chips; power MOSFET; radiation hardening (electronics); space vehicle electronics; DDR2 SDRAM; ESA SEU-Monitor; GSI; energy ions; heavy-ions; power MOSFET; single-event effects; Power MOSFET; Radiation effects; SDRAM; Single event upset; Testing; Heavy Ions; Single event Effects; energy effects; indirect ionization; nuclear reactions;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131368
