Title :
III-V multijunction solar cells for concentrations around 1000X: the IES-UPM strategy
Author :
Galiana, B. ; Garcia, I. ; González, J.R. ; Baudrit, M. ; Rey-Stolle, I. ; Algora, C.
Author_Institution :
Univ. Politecnica de Madrid, Madrid
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
The IES-UPM has a large trajectory in the III-V concentration solar cells research. Nowadays, the long term aim is to achieve efficiencies around 35% at 1000 X by multijunction solar cells and to transfer the technology to industry. For this purpose three complementary lines are ongoing: the growth of III-V and solar cells structures by MOVPE, the reliability study of concentrator solar cells and the modeling of the devices by means of distributed models.
Keywords :
III-V semiconductors; MOCVD; reliability; solar cells; vapour phase epitaxial growth; IES-UPM strategy; III-V multijunction solar cells; MOVPE; concentrator solar cells; distributed models; efficiency 35 percent; reliability study; Costs; Epitaxial growth; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Photovoltaic cells; Power generation; Semiconductor materials; Solar power generation; Sun; MOVPE; compound semiconductor; multijunction photovoltaic cells;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384037
