• DocumentCode
    3033234
  • Title

    Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs

  • Author

    Francis, S. Ashley ; Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Simoen, Eddy ; Mitard, Jerome ; Claeys, Cor

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    Irradiated Ge pMOSFETs have been characterized via charge pumping (ICP) and 1/f-noise. The noise increases much more with irradiation than ICP, showing that bulk oxide traps affect the noise more than interface traps.
  • Keywords
    1/f noise; MOSFET; charge pump circuits; elemental semiconductors; germanium; radiation hardening (electronics); semiconductor device noise; 1/f noise; Ge; bulk oxide traps; charge pumping; interface traps; irradiated germanium pMOSFET; Annealing; Charge pumps; Hafnium compounds; Logic gates; MOSFETs; Noise; Radiation effects; 1/ƒ noise; Charge pumping; border traps; interface traps; total ionizing dose;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131369
  • Filename
    6131369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3033234