DocumentCode :
3033234
Title :
Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs
Author :
Francis, S. Ashley ; Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Simoen, Eddy ; Mitard, Jerome ; Claeys, Cor
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
24
Lastpage :
27
Abstract :
Irradiated Ge pMOSFETs have been characterized via charge pumping (ICP) and 1/f-noise. The noise increases much more with irradiation than ICP, showing that bulk oxide traps affect the noise more than interface traps.
Keywords :
1/f noise; MOSFET; charge pump circuits; elemental semiconductors; germanium; radiation hardening (electronics); semiconductor device noise; 1/f noise; Ge; bulk oxide traps; charge pumping; interface traps; irradiated germanium pMOSFET; Annealing; Charge pumps; Hafnium compounds; Logic gates; MOSFETs; Noise; Radiation effects; 1/ƒ noise; Charge pumping; border traps; interface traps; total ionizing dose;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131369
Filename :
6131369
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3033234
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