Title :
Accelerated oxidation of silicon due to x-ray irradiation
Author :
Bhandaru, Shweta ; Zhang, En Xia ; Fleetwood, Daniel M. ; Reed, Robert A. ; Weller, Robert A. ; Weiss, Sharon M.
Author_Institution :
Interdiscipl. Grad. Program in Mater. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Enhanced rates of oxide growth have been observed on silicon when exposed to high-energy x-ray irradiation. This observed effect could potentially be utilized for remote total ionizing dose-sensing applications.
Keywords :
X-ray applications; elemental semiconductors; radiation hardening (electronics); silicon; high-energy X-ray irradiation; oxide growth; remote total ionizing dose-sensing applications; silicon accelerated oxidation; Atomic layer deposition; Atomic measurements; Optical sensors; Oxidation; Radiation effects; Silicon; Temperature measurement; Silicon; oxide; ozone; x-ray detection;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131371
