Title :
Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide
Author :
Naceur, M. ; Touboul, A.D. ; Gedion, M. ; Vaille, J.R. ; Wrobel, F. ; Lorfèvre, E. ; Bezerra, F. ; Chaumont, G. ; Saigné, F.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
Charge to breakdown reduction after electric stress is observed after heavy ion irradiation at two energies exhibiting a similar LET value. An enhanced degradation of the oxide layer reliability is observed at low energy.
Keywords :
ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device reliability; LET value; charge-breakdown reduction; electric stress; heavy ion irradiation; ionizing synergy process; linear energy transfer value; nonionizing synergy process; oxide layer reliability degradation; power MOSFET oxide; Degradation; Electric breakdown; Logic gates; MOSFETs; Radiation effects; Reliability; Stress; Charge to Breakdown; Heavy Ions; High Electrical Field Stress (HEFS); LET; Latent Defect; Power MOSFET; Structural modifications; Time to Breakdown;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131372
