DocumentCode
3033326
Title
X-ray radiation effects in Overlapping Circular-Gate MOSFET´s
Author
De Lima, J.A. ; Silveira, M.A.G. ; Cirne, K.H. ; Santos, R.B.B. ; Medina, N.H.
Author_Institution
Centra de Tecnol. da Informacao, Campinas, Brazil
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
88
Lastpage
91
Abstract
IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT´s) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process.
Keywords
CMOS integrated circuits; MOSFET; X-ray effects; radiation effects; CMOS process; ELT overlapping circular-gate transistors; IV-characteristics; O-CGT subthreshold behavior; X-ray radiation effects; overlapping circular-gate MOSFET; rectangular-gate transistors; size 0.35 mum; CMOS process; Layout; Leakage current; Logic gates; MOSFET circuits; Radiation effects; Transistors; MOSFET; Total Ionizing Dose (TID); X-ray; electronic devices; leakage current; radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131374
Filename
6131374
Link To Document