Title :
Contribution to SER prediction: A new metric based on RC transient simulations
Author :
Micolau, G. ; Castellani-Coulié, K. ; Aziza, H. ; Portal, J.-M.
Author_Institution :
IMT Technopole de Chateau - Gombert, Univ. Aix-Marseille, Marseille, France
Abstract :
This work provides a new metric for SEU reliability studies. This metric is based on transient I-V responses extracted from a RC analytical model, in order to detect a SEU threshold.
Keywords :
SRAM chips; integrated circuit reliability; radiation hardening (electronics); RC analytical model; RC transient simulations; SER prediction; SEU reliability studies; SEU threshold detection; SRAM; transient I-V responses; Analytical models; Integrated circuit modeling; MOSFETs; Measurement; Noise; Random access memory; SPICE; Noise source currents; Reliability; SER; SRAM; Single Event Upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131377
