DocumentCode
3033394
Title
Contribution to SER prediction: A new metric based on RC transient simulations
Author
Micolau, G. ; Castellani-Coulié, K. ; Aziza, H. ; Portal, J.-M.
Author_Institution
IMT Technopole de Chateau - Gombert, Univ. Aix-Marseille, Marseille, France
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
103
Lastpage
108
Abstract
This work provides a new metric for SEU reliability studies. This metric is based on transient I-V responses extracted from a RC analytical model, in order to detect a SEU threshold.
Keywords
SRAM chips; integrated circuit reliability; radiation hardening (electronics); RC analytical model; RC transient simulations; SER prediction; SEU reliability studies; SEU threshold detection; SRAM; transient I-V responses; Analytical models; Integrated circuit modeling; MOSFETs; Measurement; Noise; Random access memory; SPICE; Noise source currents; Reliability; SER; SRAM; Single Event Upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131377
Filename
6131377
Link To Document