Title :
Temperature effects on power MOSFET and IGBT sensitivities toward single events
Author :
Morand, S. ; Miller, F. ; Austin, P. ; Poirot, P. ; Gaillard, R. ; Carriére, T. ; Buard, N.
Author_Institution :
EADS France IW, Suresnes, France
Abstract :
Proton accelerator and pulsed laser tests show that temperature induces large variations compared to room temperature for power electronic radiation sensitivity assessment.
Keywords :
insulated gate bipolar transistors; power MOSFET; power bipolar transistors; proton accelerators; radiation hardening (electronics); semiconductor device testing; IGBT sensitivities; power MOSFET; power electronic radiation sensitivity assessment; proton accelerator; pulsed laser tests; single events; temperature 293 K to 298 K; temperature effects; Insulated gate bipolar transistors; Laser beams; Power MOSFET; Semiconductor process modeling; Sensitivity; Temperature sensors; Burnout; IGBT; Latch-Up; Proton radiation; Pulsed Laser Stimulation; Temperature;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131378
