Silicided silicon-sidewall source and drain (S/sup 4/D) structure for high-performance 75-nm gate length pMOSFETs

Silicided Silicon-Sidewall Source and Drain (S/sup 4/D) structures were proposed for sub-0.1 /spl mu/m gate length p-MOSFETs as the structure which can realize extremely small source and drain series resistance with small short-channel effects. By using this structure, 75 mm gate length p-MOSFETs were fabricated and very good electrical characteristics were confirmed. In this experiment, only p-MOSFETs were fabricated, but the S/sup 4/D structures are also suitable for the sub-0.1 /spl mu/m gate length CMOS devices, because, basically, the sidewall amorphous silicon is easily doped with the dopant of source and drain by source and drain implantation without prior in situ doping.