Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET

Author

Liu, Zhangli ; Hu, Zhiyuan ; Zhang, Zhengxuan ; Shao, Hua ; Ning, Bingxu ; Chen, Ming ; Bi, Dawei ; Zou, Shichang

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

28

Lastpage

35

Abstract

Deep submicron technology devices with different width/length were exposed by gamma ray irradiation. Different total ionizing dose (TID) effects were observed for the wide and narrow channel device. Large increase of off-state leakage was observed for the wide channel device under radiation. However, insignificantly increase of off-state leakage was observed for the narrow channel one. The simulation result of potential distribution in the shallow trench isolation (STI) has shown that the influence of poly region extended into field oxide on the device´s radiation response. The oxide trapped charge in the top and down region of the STI plays an important role in the different TID responses. A negative substrate bias during irradiation can give us more information about the charge distribution along the STI sidewall. By introducing non-uniform charge along the STI sidewall in the three dimension (3D) simulation, good agreement between the experiment and simulation result is demonstrated.

Keywords

MOSFET; radiation effects; 3D simulation; STI; TID effect; charge distribution; deep submicron MOSFET technology; device radiation response; field oxide trapped charge; gamma ray irradiation; narrow channel device; negative substrate bias; off-state leakage; polyregion influence; shallow trench isolation; three dimension simulation; total ionizing dose effect; wide channel device; Electric fields; Leakage current; Logic gates; Radiation effects; Simulation; Substrates; Transistors; oxide trapped charge shallow trench isolation; three dimension simulation; total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131380

Filename

6131380