Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion

Author

Backlund, B. ; Rahimo, M. ; Klaka, S. ; Siefken, J.

Author_Institution

ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2009

fDate

24-26 June 2009

Firstpage

1

Lastpage

6

Abstract

Today, the main topologies for power conversion for medium voltage applications are mainly determined by the available voltage ratings of the power semiconductor devices. In this paper we shall examine the main existing topologies for medium voltage wind power energy conversion and determine the voltage levels that can be can be achieved with the currently available high voltage semiconductor components such as the IGCT and IGBT. The paper will also provide an insight into development trends for future power semiconductor device concepts with increased power levels and improved overall static and dynamic performance.

Keywords

insulated gate bipolar transistors; power conversion; power semiconductor devices; wind power plants; IGBT; IGCT; high-power semiconductor devices; medium voltage wind energy conversion; power conversion topology; voltage ratings; Circuit topology; Induction generators; Insulated gate bipolar transistors; Inverters; Medium voltage; Power electronics; Power generation; Power semiconductor devices; Wind energy; Wind energy generation; IGBT; IGCT; topology; voltage rating;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Machines in Wind Applications, 2009. PEMWA 2009. IEEE

Conference_Location

Lincoln, NE

Print_ISBN

978-1-4244-4935-4

Electronic_ISBN

978-1-4244-4936-1

Type

conf

DOI

10.1109/PEMWA.2009.5208365

Filename

5208365