Title :
Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
Author :
Backlund, B. ; Rahimo, M. ; Klaka, S. ; Siefken, J.
Author_Institution :
ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
Today, the main topologies for power conversion for medium voltage applications are mainly determined by the available voltage ratings of the power semiconductor devices. In this paper we shall examine the main existing topologies for medium voltage wind power energy conversion and determine the voltage levels that can be can be achieved with the currently available high voltage semiconductor components such as the IGCT and IGBT. The paper will also provide an insight into development trends for future power semiconductor device concepts with increased power levels and improved overall static and dynamic performance.
Keywords :
insulated gate bipolar transistors; power conversion; power semiconductor devices; wind power plants; IGBT; IGCT; high-power semiconductor devices; medium voltage wind energy conversion; power conversion topology; voltage ratings; Circuit topology; Induction generators; Insulated gate bipolar transistors; Inverters; Medium voltage; Power electronics; Power generation; Power semiconductor devices; Wind energy; Wind energy generation; IGBT; IGCT; topology; voltage rating;
Conference_Titel :
Power Electronics and Machines in Wind Applications, 2009. PEMWA 2009. IEEE
Conference_Location :
Lincoln, NE
Print_ISBN :
978-1-4244-4935-4
Electronic_ISBN :
978-1-4244-4936-1
DOI :
10.1109/PEMWA.2009.5208365
