Title :
Rediscovery of single-event gate rupture mechanism in power MOSFETs
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Mizuta, Eiichi ; Abe, Hiroshi ; Hirao, Toshio ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.
Keywords :
power MOSFET; catastrophic failure mode; power MOSFET; single-event gate rupture mechanism; space radiation environment; Electric breakdown; Electric fields; Electrodes; Ions; Logic gates; MOSFETs; Radiation effects; Heavy ions; power MOSFETs; radiation damage; single-event effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131382
