High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy

Author

Arinero, R. ; Touboul, A.D. ; Ramonda, M. ; Guasch, C. ; Gonzalez-Velo, Y. ; Boch, J. ; Saigné, F.

Author_Institution

Inst. d´´Electron. du Sud (IES), Univ. Montpellier II, Montpellier, France

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

47

Lastpage

50

Abstract

The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO₂/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

Keywords

atomic force microscopy; elemental semiconductors; ion beam effects; semiconductor-insulator boundaries; silicon; silicon compounds; SiO₂-Si; conductive atomic force microscopy; conductive-AFM; electrical stress behavior; high total ionizing dose effect; nanometer spatial resolution; threshold voltage shift effect; ultrathin structure irradiation; Atomic force microscopy; Force; Radiation effects; Silicon; Stress; Tunneling; Conductive-AFM (C-AFM); Ramp Voltage Stress; SiO2-Si structures; Weibull statistic; nano I–V curves; oxide reliability; ultra-thin oxide films;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131383

Filename

6131383