DocumentCode :
3033518
Title :
High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy
Author :
Arinero, R. ; Touboul, A.D. ; Ramonda, M. ; Guasch, C. ; Gonzalez-Velo, Y. ; Boch, J. ; Saigné, F.
Author_Institution :
Inst. d´´Electron. du Sud (IES), Univ. Montpellier II, Montpellier, France
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
47
Lastpage :
50
Abstract :
The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.
Keywords :
atomic force microscopy; elemental semiconductors; ion beam effects; semiconductor-insulator boundaries; silicon; silicon compounds; SiO2-Si; conductive atomic force microscopy; conductive-AFM; electrical stress behavior; high total ionizing dose effect; nanometer spatial resolution; threshold voltage shift effect; ultrathin structure irradiation; Atomic force microscopy; Force; Radiation effects; Silicon; Stress; Tunneling; Conductive-AFM (C-AFM); Ramp Voltage Stress; SiO2-Si structures; Weibull statistic; nano I–V curves; oxide reliability; ultra-thin oxide films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131383
Filename :
6131383
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3033518
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