Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared

Author

Suarez, Fernando ; Fuster, D. ; González, L. ; González, Y. ; Garcia, J.M. ; Dotor, M.L.

Author_Institution

Inst. de Microelectron. de Madrid, Tres Cantos

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

311

Lastpage

314

Abstract

In this work, we present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with three stacked layers of InAs quantum wires (QWR) as active zone and aluminum free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)₄ lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get an uniform QWR distribution. Lasing emission is observed at a wavelength of -1.66 mum up to 280K from 40mum x 1000mum devices, with a threshold current density at that temperature of 3.6 kA/cm².

Keywords

III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wires; InAs; InP; aluminum free waveguide; atomic layer molecular beam epitaxy; quantum wire laser; semiconductor laser; superlattices; Aluminum; Atom lasers; Atomic beams; Atomic layer deposition; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature; Waveguide lasers; Wires; Low-dimensional structures; Molecular Beam Epitaxy; Quantum wires; Self-assembled Semiconducting III-V materials; Semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.384055

Filename

4271233