Title :
Calibration of the weighed sensitive volume model to heavy ion experimental data
Author :
García, Rubén ; Daly, Eamonn J. ; Evans, Hugh D R ; Nieminen, Petteri ; Santin, Giovanni ; Sierawski, Brian D. ; Mendenhall, Marcus H.
Author_Institution :
Space Environments & Effects Sect. at the Eur. Space Res. & Technol. Centre of the Eur. Space Agency, Noorwijk, Netherlands
Abstract :
The shape of the single event effect (SEE) cross section as a function of the ion´s linear energy transfer (LET) can be explained in terms of intra-cell variations of the charge collection efficiency within the cell as opposed the inter-cell spread in the critical charge, as assumed earlier. Free charge carriers generated in areas in absence of electric field but near the depletion region may reach the latter through diffusion processes, then being collected by drift forces in the p-n junction of the semiconductor. In this context, a model of the SV in which different regions are defined through charge collection efficiencies (CCE) is pertinent. A method for calibrating this model to experimental data is proposed, as well as a practical example of how this can be done. A crucial aspect of this technique is that, as will be shown, the experimental cross section curve can be recovered through Monte Carlo simulations of a single RPP as opposed to the Heaviside step function obtained when using a standard single sensitive volume approach.
Keywords :
Monte Carlo methods; p-n junctions; radiation hardening (electronics); CCE; Heaviside step function; Monte Carlo simulations; SEE cross-section; charge collection efficiency; depletion region; diffusion process; drift forces; free-charge carriers; heavy-ion experimental data; intracell variations; ion LET; ion linear energy transfer; semiconductor p-n junction; single-event effect; standard single-sensitive volume approach; weighed sensitive volume model; Calibration; Data models; Electric fields; Equations; Mathematical model; Solid modeling; Substrates; Weighed sensitive volume; charge carrier diffusion; charge collection efficiency; p-n junction; substrate;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131386