• DocumentCode
    3033574
  • Title

    Physical limitations on delay and energy dissipation of interconnects for post-CMOS devices

  • Author

    Rakheja, Shaloo ; Naeemi, Azad ; Meindl, James D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In order to maintain the historical scaling of computational power in information processing beyond the 2020 technology node, switches that are based on state variables other than electron charge are currently being investigated. Examples of alternate state variables include the electron spin, pseudo-spin in graphene, and excitons. This paper discusses different communication mechanisms for on-chip local interconnects for post-CMOS devices. Models for delay and energy dissipation for novel interconnects are obtained, and a comparison is provided with their CMOS counterpart. It is shown that novel interconnects can potentially consume less energy per bit as compared to the CMOS interconnects. However, they pose significant delay penalty. The paper highlights some of the major implications of the novel interconnects on the post-CMOS circuits.
  • Keywords
    CMOS integrated circuits; integrated circuit interconnections; CMOS interconnects; communication mechanisms; electron spin; energy dissipation; excitons; graphene; on-chip local interconnects; physical limitations; post-CMOS devices; pseudo-spin; CMOS technology; Delay; Electrons; Energy dissipation; Excitons; Integrated circuit interconnections; Physics computing; Power engineering computing; Semiconductor device modeling; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510448
  • Filename
    5510448