DocumentCode
3033574
Title
Physical limitations on delay and energy dissipation of interconnects for post-CMOS devices
Author
Rakheja, Shaloo ; Naeemi, Azad ; Meindl, James D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
In order to maintain the historical scaling of computational power in information processing beyond the 2020 technology node, switches that are based on state variables other than electron charge are currently being investigated. Examples of alternate state variables include the electron spin, pseudo-spin in graphene, and excitons. This paper discusses different communication mechanisms for on-chip local interconnects for post-CMOS devices. Models for delay and energy dissipation for novel interconnects are obtained, and a comparison is provided with their CMOS counterpart. It is shown that novel interconnects can potentially consume less energy per bit as compared to the CMOS interconnects. However, they pose significant delay penalty. The paper highlights some of the major implications of the novel interconnects on the post-CMOS circuits.
Keywords
CMOS integrated circuits; integrated circuit interconnections; CMOS interconnects; communication mechanisms; electron spin; energy dissipation; excitons; graphene; on-chip local interconnects; physical limitations; post-CMOS devices; pseudo-spin; CMOS technology; Delay; Electrons; Energy dissipation; Excitons; Integrated circuit interconnections; Physics computing; Power engineering computing; Semiconductor device modeling; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510448
Filename
5510448
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