DocumentCode :
3033574
Title :
Physical limitations on delay and energy dissipation of interconnects for post-CMOS devices
Author :
Rakheja, Shaloo ; Naeemi, Azad ; Meindl, James D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
In order to maintain the historical scaling of computational power in information processing beyond the 2020 technology node, switches that are based on state variables other than electron charge are currently being investigated. Examples of alternate state variables include the electron spin, pseudo-spin in graphene, and excitons. This paper discusses different communication mechanisms for on-chip local interconnects for post-CMOS devices. Models for delay and energy dissipation for novel interconnects are obtained, and a comparison is provided with their CMOS counterpart. It is shown that novel interconnects can potentially consume less energy per bit as compared to the CMOS interconnects. However, they pose significant delay penalty. The paper highlights some of the major implications of the novel interconnects on the post-CMOS circuits.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; CMOS interconnects; communication mechanisms; electron spin; energy dissipation; excitons; graphene; on-chip local interconnects; physical limitations; post-CMOS devices; pseudo-spin; CMOS technology; Delay; Electrons; Energy dissipation; Excitons; Integrated circuit interconnections; Physics computing; Power engineering computing; Semiconductor device modeling; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510448
Filename :
5510448
Link To Document :
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