DocumentCode :
3033596
Title :
Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
Author :
Quinteros, C. ; Salomone, L. Sambuco ; Redín, E. ; Rafí, J.M. ; Zabala, M. ; Faigón, A. ; Palumbo, F. ; Campabadal, F.
Author_Institution :
Consejo Nac. de Investig. Cientificas y Tec. (CONICET), Comision de Energia Atomica (CNEA), San Martín, Argentina
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
67
Lastpage :
72
Abstract :
MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric.
Keywords :
MIS devices; high-k dielectric thin films; radiation hardening (electronics); 16O radiation; C-V curves; MIS capacitive structures; gamma radiation; high-K dielectrics; p radiation; Aluminum oxide; Capacitance; Capacitance-voltage characteristics; Capacitors; Hafnium compounds; Hysteresis; Radiation effects; High-K gate dielectrics; MOS devices; Radiation Effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131387
Filename :
6131387
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3033596
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