Title :
Noise study in photodiodes based on InGaN/GaN MQW
Author :
Navarro, Alvaro ; Rivera, Carlos ; Cuerdo, Roberto ; Pau, José Luis ; Pereiro, Juan ; Calle, Fernando ; Muñoz, Elías
Author_Institution :
Univ. Politecnica de Madrid, Madrid
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
The low frequency noise characteristics of InGaN/GaN multiple-quantum-well (MQW) P-I-N photodiodes have been studied. 1/f noise has been measured for two different In contents, under different reverse bias voltages and variable temperatures from 25 K to 623 K. Multilevel random telegraph signal (RTS) noise was found in several samples. The spectral response was measured in photovoltaic and biased mode. Specific detectivity was evaluated at various reverse voltages at temperatures up to 300degC. InGaN/GaN MQW photodiodes have been demonstrated to be a viable alternative for high temperature operation.
Keywords :
1/f noise; III-V semiconductors; gallium compounds; high-temperature electronics; indium compounds; p-i-n photodiodes; quantum well devices; semiconductor device noise; 1/f noise; InGaN-GaN; P-I-N photodiodes; low frequency noise characteristics; multilevel random telegraph signal noise; multiple-quantum-well; specific detectivity; spectral response; temperature 25 K to 623 K; Frequency measurement; Gallium nitride; Low-frequency noise; Noise measurement; PIN photodiodes; Photovoltaic systems; Quantum well devices; Telegraphy; Temperature; Voltage; High-temperature; III-Nitrides; noise measurement; quantum well devices; ultraviolet detectors;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384058
