DocumentCode
3033640
Title
Elementary process of electromigration at metal nanojunctions in the ballistic regime
Author
Hirakawa, K. ; Umeno, A. ; Yoshida, K. ; Sakata, S.
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
We have investigated electromigration process at metal nanojunctions as small as several tens of atoms and found that the elementary process of electromigration in such nanojunctions is the self-diffusion of metal atoms driven by microscopic kinetic energy transfer from single conduction electrons to single metal atoms. We have also shown that metal nanojunctions are stable and can support extremely high current densities of over 1010 A/cm2, as long as the junction voltage is below the critical value.
Keywords
current density; electromigration; nanoelectronics; ballistic regime; current density; electromigration; elementary process; metal atom; metal nanojunction; microscopic kinetic energy transfer; self-diffusion; single conduction electron; Atomic layer deposition; Atomic measurements; Conductors; Electromigration; Electrons; Gold; Kinetic energy; Metals industry; Power dissipation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510451
Filename
5510451
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