• DocumentCode
    3033640
  • Title

    Elementary process of electromigration at metal nanojunctions in the ballistic regime

  • Author

    Hirakawa, K. ; Umeno, A. ; Yoshida, K. ; Sakata, S.

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We have investigated electromigration process at metal nanojunctions as small as several tens of atoms and found that the elementary process of electromigration in such nanojunctions is the self-diffusion of metal atoms driven by microscopic kinetic energy transfer from single conduction electrons to single metal atoms. We have also shown that metal nanojunctions are stable and can support extremely high current densities of over 1010 A/cm2, as long as the junction voltage is below the critical value.
  • Keywords
    current density; electromigration; nanoelectronics; ballistic regime; current density; electromigration; elementary process; metal atom; metal nanojunction; microscopic kinetic energy transfer; self-diffusion; single conduction electron; Atomic layer deposition; Atomic measurements; Conductors; Electromigration; Electrons; Gold; Kinetic energy; Metals industry; Power dissipation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510451
  • Filename
    5510451