DocumentCode :
3033640
Title :
Elementary process of electromigration at metal nanojunctions in the ballistic regime
Author :
Hirakawa, K. ; Umeno, A. ; Yoshida, K. ; Sakata, S.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
We have investigated electromigration process at metal nanojunctions as small as several tens of atoms and found that the elementary process of electromigration in such nanojunctions is the self-diffusion of metal atoms driven by microscopic kinetic energy transfer from single conduction electrons to single metal atoms. We have also shown that metal nanojunctions are stable and can support extremely high current densities of over 1010 A/cm2, as long as the junction voltage is below the critical value.
Keywords :
current density; electromigration; nanoelectronics; ballistic regime; current density; electromigration; elementary process; metal atom; metal nanojunction; microscopic kinetic energy transfer; self-diffusion; single conduction electron; Atomic layer deposition; Atomic measurements; Conductors; Electromigration; Electrons; Gold; Kinetic energy; Metals industry; Power dissipation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510451
Filename :
5510451
Link To Document :
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