Highly reliable 0.15 /spl mu/m MOSFETs with Surface Proximity Gettering (SPG) and nitrided oxide spacer using nitrogen implantation

Author

Kuroi, T. ; Shimizu, S. ; Furukawa, A. ; Komori, S. ; Kawasaki, Y. ; Kusunoki, S. ; Okumura, Y. ; Inuishi, N. ; Tsubouchi, N. ; Horie, K.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

19

Lastpage

20

Abstract

An advanced nitrogen implantation technique is proposed. The new technique can suppress remarkably the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO/sub 2/ spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.

Keywords

CMOS integrated circuits; MOSFET; getters; hot carriers; integrated circuit reliability; integrated circuit technology; interface states; ion implantation; semiconductor device reliability; 0.15 micron; N implantation; Si:N; SiO/sub 2/; SiO/sub 2/ spacers; hot carrier degradation suppression; interface states; leakage current; nitrided oxide spacer; reliable MOSFETs; secondary defects; surface proximity gettering; ultra shallow junction; Degradation; Electrodes; Gettering; Hot carriers; Interface states; Ion implantation; Laboratories; Leakage current; MOSFETs; Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520839

Filename

520839