Title :
Highly reliable 0.15 /spl mu/m MOSFETs with Surface Proximity Gettering (SPG) and nitrided oxide spacer using nitrogen implantation
Author :
Kuroi, T. ; Shimizu, S. ; Furukawa, A. ; Komori, S. ; Kawasaki, Y. ; Kusunoki, S. ; Okumura, Y. ; Inuishi, N. ; Tsubouchi, N. ; Horie, K.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
An advanced nitrogen implantation technique is proposed. The new technique can suppress remarkably the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO/sub 2/ spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.
Keywords :
CMOS integrated circuits; MOSFET; getters; hot carriers; integrated circuit reliability; integrated circuit technology; interface states; ion implantation; semiconductor device reliability; 0.15 micron; N implantation; Si:N; SiO/sub 2/; SiO/sub 2/ spacers; hot carrier degradation suppression; interface states; leakage current; nitrided oxide spacer; reliable MOSFETs; secondary defects; surface proximity gettering; ultra shallow junction; Degradation; Electrodes; Gettering; Hot carriers; Interface states; Ion implantation; Laboratories; Leakage current; MOSFETs; Nitrogen;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520839
