Title :
A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects
Author :
Lázaro, A. ; Nae, B. ; Moldovan, O. ; Iniguez, B.
Author_Institution :
Univ. Rovira i Virgili, Tarragona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
This paper presents a new approach for an analytical model of nanoscale double-gate (DG) MOSFET. The equivalent circuit is considered over a fully distributed active line, opening the door to obtain a compact and unified small equivalent circuit that includes noise contributions.
Keywords :
MOSFET; nanoelectronics; technology CAD (electronics); CAD model; RF noise; equivalent circuit; nanoscale double-gate MOSFET; Active noise reduction; Admittance; Capacitance; Capacitors; Circuit noise; Crosstalk; Delay effects; Equivalent circuits; MOSFET circuits; Radio frequency; Compact noise modelling; Double-Gate MOSFETs; High Frequency Operation;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384066
