Title :
A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations
Author :
Lázaro, A. ; Nae, B. ; Moldovan, O. ; Iñíguez, B.
Author_Institution :
Univ. Rovira i Virgili, Tarragona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; semiconductor device testing; RF noise model; active transmission line method; analytical model; charge quantization; microwave noise model; nanoscale double-gate MOSFET; overshoot velocity effects; quantum model; Active noise reduction; Analytical models; Electrons; Equations; MOSFET circuits; Power transmission lines; Radio frequency; Semiconductor films; Semiconductor process modeling; Threshold voltage; Compact Noise Modeling; Double-Gate MOSFETs; High Frequency Operation;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384067
