DocumentCode
3033752
Title
A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations
Author
Lázaro, A. ; Nae, B. ; Moldovan, O. ; Iñíguez, B.
Author_Institution
Univ. Rovira i Virgili, Tarragona
fYear
2007
fDate
Jan. 31 2007-Feb. 2 2007
Firstpage
355
Lastpage
358
Abstract
In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.
Keywords
MOSFET; semiconductor device models; semiconductor device noise; semiconductor device testing; RF noise model; active transmission line method; analytical model; charge quantization; microwave noise model; nanoscale double-gate MOSFET; overshoot velocity effects; quantum model; Active noise reduction; Analytical models; Electrons; Equations; MOSFET circuits; Power transmission lines; Radio frequency; Semiconductor films; Semiconductor process modeling; Threshold voltage; Compact Noise Modeling; Double-Gate MOSFETs; High Frequency Operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2007 Spanish Conference on
Conference_Location
Madrid
Print_ISBN
1-4244-0868-7
Type
conf
DOI
10.1109/SCED.2007.384067
Filename
4271245
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