DocumentCode
3033789
Title
Neutron-induced failure in super-junction, IGBT, and SiC power devices
Author
Griffoni, Alessio ; Van Duivenbode, Jeroen ; Linten, Dimitri ; Simoen, Eddy ; Rech, Paolo ; Dilillo, Luigi ; Wrobel, Frédéric ; Verbist, Patrick ; Groeseneken, Guido
Author_Institution
OSRAM, Treviso, Italy
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
226
Lastpage
231
Abstract
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Keywords
III-V semiconductors; insulated gate bipolar transistors; power bipolar transistors; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; IGBT; SiC; electron volt energy 50 MeV; electron volt energy 80 MeV; neutron-induced failure; power devices; super-junction device; Insulated gate bipolar transistors; Ions; Logic gates; Neutrons; Power MOSFET; Silicon; Silicon carbide; Burnout (SEB); Insulated Gate Bipolar Transistor (IGBT); Silicon Carbide (SiC); Single Event; Single Event Gate Rupture (SEGR); neutrons; power MOSFET; super-junction;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131395
Filename
6131395
Link To Document