Title :
Neuton-induced Multiple Bit Upsets on dynamically-stressed commercial SRAM arrays
Author :
Rech, P. ; Galliere, J.-M. ; Girard, P. ; Griffoni, A. ; Boch, J. ; Wrobel, F. ; Saigné, F. ; Dilillo, L.
Author_Institution :
Lab. d´´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France
Abstract :
We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
Keywords :
SRAM chips; radiation hardening (electronics); stress analysis; MBU cross-section; QMN beams; SEU cross-section; SRAM sensitivity; TSL facility; dynamically-stressed SRAM arrays; memory architecture; memory utilization; neuton-induced multiple-bit upsets; Error analysis; Neutrons; Performance evaluation; Random access memory; Sensitivity; Single event upset; Stress; Multiple Bit Upset; SRAM; Soft Error Rate;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131396
