Neuton-induced Multiple Bit Upsets on dynamically-stressed commercial SRAM arrays

Author

Rech, P. ; Galliere, J.-M. ; Girard, P. ; Griffoni, A. ; Boch, J. ; Wrobel, F. ; Saigné, F. ; Dilillo, L.

Author_Institution

Lab. d´´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

274

Lastpage

280

Abstract

We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.

Keywords

SRAM chips; radiation hardening (electronics); stress analysis; MBU cross-section; QMN beams; SEU cross-section; SRAM sensitivity; TSL facility; dynamically-stressed SRAM arrays; memory architecture; memory utilization; neuton-induced multiple-bit upsets; Error analysis; Neutrons; Performance evaluation; Random access memory; Sensitivity; Single event upset; Stress; Multiple Bit Upset; SRAM; Soft Error Rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131396

Filename

6131396