DocumentCode :
3033829
Title :
Alpha-Soft Error Rate due to new generations of high-κ gate oxides and metal gate electrodes in a 32 nm node
Author :
Gedion, M. ; Wrobel, F. ; Saigné, F. ; Schrimpf, R.D.
Author_Institution :
UMR, Univ. Montpellier 2, Montpellier, France
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
281
Lastpage :
284
Abstract :
Soft errors have become increasingly problematic in newer CMOS technologies. The integration of new elements from the periodic table, due to transistor miniaturization, introduces different properties (physical, chemical, mechanical, etc...) but natural radioactivity has so far not been considered. The new materials could increase the soft error rate, if the materials are natural radiation emitters. In this paper, the risk of integrating new materials, such as samarium and platinum, is studied by eva-luating the soft error rate of a 32 nm technology based on Monte Carlo simulations.
Keywords :
CMOS integrated circuits; Monte Carlo methods; electrodes; high-k dielectric thin films; CMOS technology; Monte Carlo simulations; alpha-soft error rate; high-κ gate oxides; metal gate electrodes; natural radiation emitters; size 32 nm; Dielectrics; Electrodes; Isotopes; Logic gates; Materials; Platinum; Alpha particles; miniaturization; platinum; samarium; soft error;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131397
Filename :
6131397
Link To Document :
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