Title :
Study of Transport Properties in 1D Nanostructured Semiconductor Devices using Monte Carlo Simulation
Author :
Sarwar, Hasan ; Rafique, Shahida
Author_Institution :
Univ. of Dhaka, Dhaka
Abstract :
Electron transport through devices (ternary AlxGa1-xAs, GaxIn1-xAs and AlxIn1-xAs), have been observed using Monte Carlo simulation. The properties that have been observed and compared are number of electrons in the Gamma valley, L valley, and the X valley, drift velocity in the presence of different scattering mechanisms.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; electrical conductivity; gallium arsenide; indium compounds; nanotechnology; semiconductor device models; 1D nanostructured semiconductor devices; Gamma valley; L valley; Monte Carlo simulation; X valley; drift velocity; electron transport; Acoustic scattering; Electron optics; Mechanical factors; Nanoscale devices; Next generation networking; Optical scattering; Phonons; Semiconductor devices; Semiconductor impurities; Temperature;
Conference_Titel :
Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-89-955301-4-6
Electronic_ISBN :
978-89-955301-4-6
DOI :
10.1109/COINNGNCON.2006.4454688
