• DocumentCode
    3033856
  • Title

    A half-micron pitch Cu interconnection technology

  • Author

    Ueno, K. ; Ohto, K. ; Tsunenari, K.

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1995
  • fDate
    6-8 June 1995
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12 /spl mu/m Cu interconnections whose effective resistivity is 1.9 /spl mu//spl Omega/cm have been obtained. Improved thermal stability up to 600/spl deg/C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
  • Keywords
    copper; integrated circuit interconnections; integrated circuit metallisation; thermal stability; 0.12 micron; 600 C; Cu; Cu interconnection technology; Cu oxidation suppression; MOCVD-TiN barrier layer; TMA treatment; TiN; alumina capped oxidation-free structure; half-micron pitch; self-aligned plug; thermal stability; trimethylaluminum treatment; Annealing; Conductivity; Contact resistance; Etching; Oxidation; Plugs; Surface treatment; Testing; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    0-7803-2602-4
  • Type

    conf

  • DOI
    10.1109/VLSIT.1995.520843
  • Filename
    520843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3033856