Title :
A half-micron pitch Cu interconnection technology
Author :
Ueno, K. ; Ohto, K. ; Tsunenari, K.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12 /spl mu/m Cu interconnections whose effective resistivity is 1.9 /spl mu//spl Omega/cm have been obtained. Improved thermal stability up to 600/spl deg/C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
Keywords :
copper; integrated circuit interconnections; integrated circuit metallisation; thermal stability; 0.12 micron; 600 C; Cu; Cu interconnection technology; Cu oxidation suppression; MOCVD-TiN barrier layer; TMA treatment; TiN; alumina capped oxidation-free structure; half-micron pitch; self-aligned plug; thermal stability; trimethylaluminum treatment; Annealing; Conductivity; Contact resistance; Etching; Oxidation; Plugs; Surface treatment; Testing; Thermal stability; Tin;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520843
