DocumentCode
3033861
Title
The improvement of electrical programmable fuse with salicide-block dielectric film in 40nm CMOS Technology
Author
Wu, Kuei-Sheng ; Wong, Chang-Chien ; Chi, Sinclair ; Tseng, Ching-Hsiang ; Huang, Purple ; Huang, Devon ; Su, Titan
Author_Institution
United Microelectron. Corp., Sinshih Township, Taiwan
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
This paper presents an improvement of electrical programmable fuse with dielectric film. By inserting a dielectric film as cap layer combined with self-align silicide block (SAB) process, the program current margin has been extended. This macro has lower program voltage at 2.3V for 8.5μs and can be successfully read out with proper sensing amplifier design.
Keywords
CMOS integrated circuits; dielectric materials; electric fuses; CMOS technology; electrical programmable fuse; salicide-block dielectric film; self-align silicide block; CMOS technology; Cathodes; Circuits; Contacts; Dielectric films; Fuses; Plugs; Silicides; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510461
Filename
5510461
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