• DocumentCode
    3033867
  • Title

    Assessment and comparison of the low energy proton sensitivity in 65nm to 28nm SRAM devices

  • Author

    Weulersse, Cécile ; Miller, Florent ; Alexandrescu, Dan ; Schaefer, Erwin ; Gaillard, Rémi

  • Author_Institution
    EADS France, Suresnes, France
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    291
  • Lastpage
    296
  • Abstract
    The low energy proton sensitivity is investigated on 65nm to 28nm SRAM devices. The experiments are based on a novel cost and time-efficient methodology, which allows irradiations in high energy facilities and which is more tolerant to incident energy uncertainty. The low energy proton sensitivity is compared among the test chips. No scaling trends are highlighted.
  • Keywords
    SRAM chips; radiation hardening (electronics); SRAM devices; high energy facilities; incident energy uncertainty; low energy proton sensitivity; size 65 nm to 28 nm; test chips; time-efficient methodology; Copper; Ionization; Protons; Radiation effects; Random access memory; Sensitivity; Silicon; Direct ionization; SRAM; proton irradiation; single event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131399
  • Filename
    6131399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3033867