Title :
Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
Author :
Sun, S.C. ; Tsai, M.H. ; Tsai, C.E. ; Chiu, H.T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500/spl deg/C than CVD TiN of 450/spl deg/C.
Keywords :
CVD coatings; copper; diffusion barriers; metallisation; tantalum compounds; thermal stability; 500 C; Cu; MOCVD tantalum nitride diffusion barrier; TBTDET precursor; TaN; carbon concentration; copper metallization; resistivity; terbutylimido-tris-diethylamido tantalum; thermal stability; Chemistry; Conductivity; Copper; MOCVD; Metallization; Optical films; Sputtering; Temperature; Thermal resistance; Tin;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520844
