Title :
Alpha particle induced single-event error rates and scaling trends in commercial SRAM cells
Author :
Chatterjee, I. ; Bhuva, B.L. ; Wen, S.-J. ; Wong, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Alpha particles are a critical reliability problem facing advanced technologies. This paper reports extensive tests over a wide range of technology nodes on CMOS SRAMs to study operating voltage, data pattern, operating frequency and operational-mode dependency of alpha particle induced single-event upsets rates.
Keywords :
CMOS memory circuits; SRAM chips; alpha-particle effects; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); CMOS SRAM testing; SRAM cells; alpha particle-induced single-event error rates; data pattern; operating frequency; operating voltage; operational-mode dependency; reliability problem; Error analysis; Layout; Random access memory; Sensitivity; System-on-a-chip; Transistors; Visualization; Multiple Bit Upset (MBU); SER; SRAM; Single Bit Upset (SBU); alpha particle; soft error;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131400
