DocumentCode
3033924
Title
Terrestrial neutron-induced single-event burnout in SiC power diodes
Author
Asai, Hiroaki ; Sugimoto, Kenji ; Nashiyama, Isamu ; Iide, Yoshiya ; Shiba, Kensuke ; Matsuda, Mieko ; Miyazaki, Yoshio
Author_Institution
High-Reliability Eng. & Components Corp. (HIREC), Tsukuba, Japan
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
238
Lastpage
243
Abstract
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB stand point of view.
Keywords
III-V semiconductors; power semiconductor diodes; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; SiC; neutron-induced SEB; power devices; power diodes; terrestrial neutron-induced single-event burnout; Carbon; Neutrons; Particle beams; Radiation effects; Silicon; Silicon carbide; Testing; Power Devices; Silicon Carbide (SiC); Single Event Burnout; Terrestrial Neutron;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131401
Filename
6131401
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