DocumentCode :
3033946
Title :
Combined use of heavy ion and proton test data in the determination of a GaAs Power MESFET critical charge and sensitive depth
Author :
García, Rubén ; Daly, Eamonn J. ; Evans, Hugh D R ; Nieminen, Petteri ; Santin, Giovanni ; Sierawski, Brian D. ; Mendenhall, Marcus H.
Author_Institution :
Eur. Space Res. & Technol. Centre, Eur. Space Agency, Noorwijk, Netherlands
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
244
Lastpage :
251
Abstract :
A method is proposed that uses the fundamental physical differences between direct and indirect energy deposition processes to obtain accurate values of the sensitive volume (SV) thickness and critical charge of electronic devices. The intention is to calibrate a unified model capable of describing both heavy ion and proton test data through Monte Carlo (MC) simulations and therefore also suitable for performing on-board predictions. The method was applied toavailable test data from a Gallium Arsenide (GaAs) power MESFET currently on board the MetOp-A Earth-observation mission, and results were contrasted with the measured on-board time to failure period.
Keywords :
Monte Carlo methods; gallium arsenide; power MESFET; radiation hardening (electronics); wide band gap semiconductors; GaAs; MC simulations; MetOp-A Earth-observation mission; Monte Carlo simulations; electronic devices; gallium arsenide power MESFET; heavy ion test data; indirect energy deposition process; on-board predictions; power MESFET; proton test data; Data models; Gallium arsenide; Ionization; MESFETs; Particle beams; Performance evaluation; Protons; LET threshold; Monte Carlo simulation; Single event effect (SEE); critical charge; direct ionization; indirect ionization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131402
Filename :
6131402
Link To Document :
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