Title :
A PELOX isolated sub-0.5 micron thin-film SOI technology
Author :
Gilbert, P.V. ; Sun, S.-W.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
The integration of Poly-Encapsulated LOCOS (PELOX) into a high performance sub-0.5 /spl mu/m thin-film SOI technology is described. The 700 /spl Aring/ (per side) bird´s beak encroachment of PELOX eliminates the need for a field implant and results in a significant reduction of the MOSFET narrow width effect. Partially-depleted N+/P+ dual poly gate MOSFET´s with 70 /spl Aring/ Tox and 0.35 /spl mu/m Lpoly were fabricated with /spl les/1 /spl mu/m active/isolation pitch. A 40% reduction in power-delay product, compared to bulk CMOS, is achieved with a CMOS ring oscillator propagation-delay of 51 psec at 2 V supply voltage.
Keywords :
CMOS analogue integrated circuits; MOSFET; isolation technology; oxidation; semiconductor technology; silicon-on-insulator; thin film transistors; 0.5 micron; CMOS ring oscillator propagation-delay; PELOX isolation; Poly-Encapsulated LOCOS; bird´s beak; narrow width effect; partially-depleted N+/P+ dual poly gate MOSFETs; power-delay product; thin-film SOI technology; CMOS technology; Doping; Implants; Isolation technology; MOS devices; MOSFET circuits; Ring oscillators; Semiconductor films; Silicon; Transistors;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520848
