Title :
Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI
Author :
Gaspard, N.J. ; Ahlbin, J.R. ; Gouker, P.M. ; Atkinson, N.M. ; Gadlage, M.J. ; Witulski, A.F. ; Holman, W.T. ; Bhuva, B.L. ; Zhang, E.X. ; Massengill, L.W.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Floating-body and body-tied inverter circuits were implemented in MIT Lincoln-Lab´s 3-dimensional SOI 150 nm process to characterize the technology for single-event effects. The circuits were tested with heavy-ions and single-event transients were measured for body-tied and floating-body inverters across all tiers. These experimental results show that for floating-body and body-tied circuits that the 3D SOI process exhibits the same SET trends as a 1D SOI process.
Keywords :
logic gates; radiation hardening (electronics); silicon-on-insulator; 3D SOI process; MIT Lincoln-Lab 3-dimensional SOI process; SET; Si; body-tied inverter circuits; floating-body inverter circuits; heavy-ions; single-event effects; single-event transients; size 150 nm; Integrated circuit interconnections; Inverters; Pulse measurements; Random access memory; Three dimensional displays; Transient analysis; Transistors; 3DSOI; body tie; floating body; heavy ion; single-event transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131403
