DocumentCode
3034083
Title
Enhancement of the total dose tolerance of a commercial CMOS active pixel sensor by use of thermal annealing
Author
Armani, J.M. ; Barrochin, P. ; Joffre, F. ; Gaillard, R. ; Saigné, F. ; Mainguy, J.L.
Author_Institution
CEA, LIST, Gif-sur-Yvette, France
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
340
Lastpage
344
Abstract
We have studied the possibility of extending the lifespan under radiation of Active Pixel Sensors by subjecting them to high temperature heating cycles while being exposed to gamma rays. We found that thermal annealing of the sensors is effective and can improve their tolerance to total ionizing dose.
Keywords
CMOS image sensors; annealing; radiation hardening (electronics); commercial CMOS active pixel sensor; gamma rays; high temperature heating cycles; thermal annealing; total dose tolerance enhancement; Annealing; Heating; Image sensors; Radiation effects; Temperature sensors; Active Pixel Sensor; CMOS Image Sensor; high temperature; ionizing dose; thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131409
Filename
6131409
Link To Document