Low capacitance multilevel interconnection using low-/spl epsi/ organic spin-on glass for quarter-micron high-speed ULSIs

Author

Furusawa, T. ; Homma, Y.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

59

Lastpage

60

Abstract

A low capacitance multilevel interconnection for high-speed ULSIs is developed. It employs metal-line spaces filled with only a low-dielectric-constant, reflowable organic spin-on glass (SOG). The SOG-filled dielectrics reduce interconnection-capacitance to about 70% that of conventional structures, and provide a breakdown voltage of 1.7 MV/cm. Low via resistance with via holes down to 0.37 /spl mu/m is achieved using O/sub 2/-RIE (reactive ion etching) surface treatment and a W-plug.

Keywords

ULSI; capacitance; integrated circuit interconnections; organic compounds; 0.25 micron; O/sub 2/-RIE; SOG-filled dielectrics; W; W-plug; breakdown voltage; capacitance; metal-line spaces; multilevel interconnections; organic spin-on glass; quarter-micron high-speed ULSIs; reflow; resistance; surface treatment; via holes; Adhesives; Breakdown voltage; Capacitance; Dielectrics; Etching; Glass; Leakage current; Plasma measurements; Surface resistance; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520857

Filename

520857