Evaluation of the radiation hardness of GaSb-based laser diodes for space applications

Author

Esquivias, Ignacio ; Tijero, José-Manuel G. ; Barbero, Juan ; López, Demetrio ; Fischer, Marc ; Roessner, Karl ; Koeth, Johannes

Author_Institution

ETSI Telecomun., Univ. Politec. de Madrid, Madrid, Spain

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

349

Lastpage

352

Abstract

We present an evaluation of the effects of proton and gamma irradiation on the performance of GaSb-based 2.1 μm laser diodes lasers for space applications. The study is focused on the effects of radiation on the Power-Current, Current-Voltage and Wavelength-Current-Temperature characteristics of the lasers. No significant radiation damage has been found.

Keywords

III-V semiconductors; gallium compounds; gamma-ray effects; radiation hardening (electronics); semiconductor lasers; GaSb; current-voltage characteristic; gamma irradiation effect evaluation; laser diode; power-current characteristic; proton irradiation effect evaluation; radiation damaging; radiation hardness evaluation; space application; wavelength 2.1 mum; wavelength-current-temperature characteristic; Diode lasers; Gas lasers; Measurement by laser beam; Protons; Radiation effects; Semiconductor lasers; Temperature measurement; GaSb-based materials; Laser diodes; mid-infrared lasers; radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131411

Filename

6131411