DocumentCode :
3034141
Title :
Evaluation of the radiation hardness of GaSb-based laser diodes for space applications
Author :
Esquivias, Ignacio ; Tijero, José-Manuel G. ; Barbero, Juan ; López, Demetrio ; Fischer, Marc ; Roessner, Karl ; Koeth, Johannes
Author_Institution :
ETSI Telecomun., Univ. Politec. de Madrid, Madrid, Spain
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
349
Lastpage :
352
Abstract :
We present an evaluation of the effects of proton and gamma irradiation on the performance of GaSb-based 2.1 μm laser diodes lasers for space applications. The study is focused on the effects of radiation on the Power-Current, Current-Voltage and Wavelength-Current-Temperature characteristics of the lasers. No significant radiation damage has been found.
Keywords :
III-V semiconductors; gallium compounds; gamma-ray effects; radiation hardening (electronics); semiconductor lasers; GaSb; current-voltage characteristic; gamma irradiation effect evaluation; laser diode; power-current characteristic; proton irradiation effect evaluation; radiation damaging; radiation hardness evaluation; space application; wavelength 2.1 mum; wavelength-current-temperature characteristic; Diode lasers; Gas lasers; Measurement by laser beam; Protons; Radiation effects; Semiconductor lasers; Temperature measurement; GaSb-based materials; Laser diodes; mid-infrared lasers; radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131411
Filename :
6131411
Link To Document :
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