CVD SiN/sub X/ anti-reflective coating for sub-0.5 /spl mu/m lithography

Author

Ong, T.P. ; Roman, B. ; Paulson, W. ; Lin, J.H. ; King, C. ; Hayden, J. ; Ku, Y.C. ; Fu, C.C. ; Luo, M. ; Philbin, C. ; Rossow, M. ; Mele, T. ; Kemp, K.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1995

fDate

6-8 June 1995

Firstpage

73

Lastpage

74

Abstract

This paper reports the investigation of low pressure chemical vapor deposition of SiN/sub X/ film for bottom antireflective coating (BARC) application in 0.35 /spl mu/m lithography and below. The SiN/sub X/ material was successfully designed to provide excellent anti-reflective layer which meets various advanced device integration requirements. This BARC process has been found to be manufacturable for deep-UV and I-line lithography.

Keywords

antireflection coatings; chemical vapour deposition; integrated circuit technology; light reflection; photolithography; silicon compounds; 0.35 micron; BARC process; CVD; I-line lithography; SiN; bottom antireflective coating; deep-UV lithography; device integration requirements; low pressure chemical vapor deposition; Chemical vapor deposition; Coatings; Distributed control; Lithography; Manufacturing processes; Optical films; Optical refraction; Optical variables control; Reflectivity; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520864

Filename

520864