A K-band power amplifier with advanced performance boosted techniques

Author

To-Po Wang ; Ji-Hong Ke ; Zong-Wei Li

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

fYear

2012

fDate

11-16 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

A K-band 0.18-μm CMOS power amplifier (PA) with advanced performance boosted techniques is presented in this paper. This PA consists of two stages and cross-coupled pairs. To improve the performance in terms of gain, output power, and PAE, the cross-coupled pairs are utilized in this design. Based on this technique, the PA´s gain can be boosted from 13.7 dB to 20.6 dB. The saturated output power (Psat) can be enhanced 2 dB, and the power-added efficiency (PAE) is increased from 3.7% to 4.9%. Moreover, small inductors are inserted between MOSFETs for peaking parasitic capacitances, leading to a further enhancement of power gain. By utilizing these advanced techniques, performance of this PA is effectively boosted.

Keywords

CMOS integrated circuits; MOSFET; power amplifiers; CMOS power amplifier; K-band power amplifier; MOSFET; advanced performance boosted techniques; efficiency 4.9 percent; gain 20.6 dB; power-added efficiency; saturated output power; size 0.18 mum; CMOS integrated circuits; Gain; Inductors; K-band; Microwave amplifiers; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Information Technology and Systems (ICWITS), 2012 IEEE International Conference on

Conference_Location

Maui, HI

Print_ISBN

978-1-4673-0947-9

Type

conf

DOI

10.1109/ICWITS.2012.6417680

Filename

6417680