A K-band power amplifier with advanced performance boosted techniques

A K-band 0.18-μm CMOS power amplifier (PA) with advanced performance boosted techniques is presented in this paper. This PA consists of two stages and cross-coupled pairs. To improve the performance in terms of gain, output power, and PAE, the cross-coupled pairs are utilized in this design. Based on this technique, the PA´s gain can be boosted from 13.7 dB to 20.6 dB. The saturated output power (Psat) can be enhanced 2 dB, and the power-added efficiency (PAE) is increased from 3.7% to 4.9%. Moreover, small inductors are inserted between MOSFETs for peaking parasitic capacitances, leading to a further enhancement of power gain. By utilizing these advanced techniques, performance of this PA is effectively boosted.